Category |
Transistors-Bipolar-Bjt-Single-Pre-Biased |
Manufacturer |
Rochester Electronics, LLC |
Series |
- |
Package |
Bulk |
RoHS |
RoHs |
Part Status |
Active |
Power - Max |
1 W |
Mounting Type |
Through Hole |
Package / Case |
3-SSIP |
Transistor Type |
NPN - Pre-Biased |
Resistor - Base (R1) |
1 kOhms |
Frequency - Transition |
- |
Supplier Device Package |
- |
Resistor - Emitter Base (R2) |
- |
Vce Saturation (Max) @ Ib, Ic |
1.2V @ 1mA, 500mA |
Current - Collector (Ic) (Max) |
800 mA |
Current - Collector Cutoff (Max) |
1µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce |
4000 @ 300mA, 2V |
Voltage - Collector Emitter Breakdown (Max) |
80 V |