Category |
Transistors-Fets-Mosfets-Arrays |
Manufacturer |
Microchip Technology |
Series |
- |
Package |
Bulk |
RoHS |
RoHs |
FET Type |
2 N-Channel (Half Bridge) |
FET Feature |
Silicon Carbide (SiC) |
Part Status |
Active |
Power - Max |
1100W |
Mounting Type |
Chassis Mount |
Package / Case |
D-3 Module |
Vgs(th) (Max) @ Id |
2.2V @ 10mA (Typ) |
Operating Temperature |
-40°C ~ 150°C (TJ) |
Rds On (Max) @ Id, Vgs |
10mOhm @ 200A, 20V |
Supplier Device Package |
D3 |
Gate Charge (Qg) (Max) @ Vgs |
490nC @ 20V |
Drain to Source Voltage (Vdss) |
1200V (1.2kV) |
Input Capacitance (Ciss) (Max) @ Vds |
9500pF @ 1000V |
Current - Continuous Drain (Id) @ 25°C |
250A (Tc) |