
Category |
Transistors-Bipolar-Bjt-Rf |
Manufacturer |
NXP USA Inc. |
Series |
- |
Package |
Bulk |
RoHS |
RoHs |
Gain |
- |
Part Status |
Obsolete |
Power - Max |
300mW |
Mounting Type |
Through Hole |
Package / Case |
TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
Transistor Type |
NPN |
Operating Temperature |
150°C (TJ) |
Frequency - Transition |
150MHz |
Supplier Device Package |
TO-92-3 |
Noise Figure (dB Typ @ f) |
- |
Current - Collector (Ic) (Max) |
25mA |
DC Current Gain (hFE) (Min) @ Ic, Vce |
67 @ 1mA, 10V |
Voltage - Collector Emitter Breakdown (Max) |
40V |