
Category |
Transistors-Bipolar-Bjt-Rf |
Manufacturer |
Infineon Technologies |
Series |
- |
Package |
Bulk |
RoHS |
RoHs |
Gain |
12.5dB ~ 13.5dB |
Part Status |
Obsolete |
Power - Max |
580mW |
Mounting Type |
Surface Mount |
Package / Case |
MICRO-X1 |
Transistor Type |
NPN |
Operating Temperature |
200°C (TJ) |
Frequency - Transition |
7.5GHz |
Supplier Device Package |
MICRO-X1 |
Noise Figure (dB Typ @ f) |
2.3dB ~ 2.9dB @ 2GHz |
Current - Collector (Ic) (Max) |
80mA |
DC Current Gain (hFE) (Min) @ Ic, Vce |
50 @ 30mA, 8V |
Voltage - Collector Emitter Breakdown (Max) |
12V |