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BSG0810NDIATMA1

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BSG0810NDIATMA1

  • Part No: BSG0810NDIATMA1
  • Manufacturer: Infineon Technologies
  • In Stock: 13944
  • Description: MOSFET 2N-CH 25V 19A/39A 8TISON
  • Shipping Date: 2024/12/26
  • Datasheet: BSG0810NDIATMA1 Datasheet
  • Category:Transistors-Fets-Mosfets-Arrays
  • Lead-Time:Contact Our sales representative Email:sales@keepboomingtech.com
Category
Transistors-Fets-Mosfets-Arrays
Manufacturer
Infineon Technologies
Series
OptiMOS™
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
RoHS
RoHs
FET Type
2 N-Channel (Dual) Asymmetrical
FET Feature
Logic Level Gate, 4.5V Drive
Part Status
Active
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Vgs(th) (Max) @ Id
2V @ 250µA
Operating Temperature
-55°C ~ 155°C (TJ)
Rds On (Max) @ Id, Vgs
3mOhm @ 20A, 10V
Supplier Device Package
PG-TISON-8
Gate Charge (Qg) (Max) @ Vgs
8.4nC @ 4.5V
Drain to Source Voltage (Vdss)
25V
Input Capacitance (Ciss) (Max) @ Vds
1040pF @ 12V
Current - Continuous Drain (Id) @ 25°C
19A, 39A