Category |
Transistors-Fets-Mosfets-Arrays |
Manufacturer |
Rohm Semiconductor |
Series |
- |
Package |
Tray |
RoHS |
RoHs |
FET Type |
2 N-Channel (Dual) |
FET Feature |
Silicon Carbide (SiC) |
Part Status |
Active |
Power - Max |
600W |
Mounting Type |
Chassis Mount |
Package / Case |
Module |
Vgs(th) (Max) @ Id |
4V @ 13.2mA |
Operating Temperature |
175°C (TJ) |
Rds On (Max) @ Id, Vgs |
- |
Supplier Device Package |
Module |
Gate Charge (Qg) (Max) @ Vgs |
- |
Drain to Source Voltage (Vdss) |
1200V (1.2kV) |
Input Capacitance (Ciss) (Max) @ Vds |
800pF @ 10V |
Current - Continuous Drain (Id) @ 25°C |
80A (Tc) |