
Category |
Transistors-Bipolar-Bjt-Single-Pre-Biased |
Manufacturer |
Rochester Electronics, LLC |
Series |
- |
Package |
Bulk |
RoHS |
RoHs |
Part Status |
Active |
Power - Max |
300 mW |
Mounting Type |
Through Hole |
Package / Case |
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Transistor Type |
PNP - Pre-Biased |
Resistor - Base (R1) |
4.7 kOhms |
Frequency - Transition |
200 MHz |
Supplier Device Package |
TO-92-3 |
Resistor - Emitter Base (R2) |
- |
Vce Saturation (Max) @ Ib, Ic |
300mV @ 1mA, 10mA |
Current - Collector (Ic) (Max) |
100 mA |
Current - Collector Cutoff (Max) |
100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce |
100 @ 1mA, 5V |
Voltage - Collector Emitter Breakdown (Max) |
40 V |