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Category |
Transistors-Bipolar-Bjt-Single-Pre-Biased |
Manufacturer |
onsemi |
Series |
- |
Package |
Tape & Box (TB) |
RoHS |
RoHs |
Part Status |
Obsolete |
Power - Max |
300 mW |
Mounting Type |
Through Hole |
Package / Case |
TO-226-3, TO-92-3 Short Body |
Transistor Type |
NPN - Pre-Biased |
Resistor - Base (R1) |
4.7 kOhms |
Frequency - Transition |
250 MHz |
Supplier Device Package |
TO-92S |
Resistor - Emitter Base (R2) |
4.7 kOhms |
Vce Saturation (Max) @ Ib, Ic |
300mV @ 500µA, 10mA |
Current - Collector (Ic) (Max) |
100 mA |
Current - Collector Cutoff (Max) |
100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce |
20 @ 10mA, 5V |
Voltage - Collector Emitter Breakdown (Max) |
50 V |