Category |
Transistors-Fets-Mosfets-Arrays |
Manufacturer |
IXYS |
Series |
HiPerFET™, TrenchT2™ |
Package |
Tube |
RoHS |
RoHs |
FET Type |
2 N-Channel (Dual) Asymmetrical |
FET Feature |
Standard |
Part Status |
Active |
Power - Max |
170W |
Mounting Type |
Through Hole |
Package / Case |
ISOPLUSi5-Pak™ |
Vgs(th) (Max) @ Id |
4V @ 250µA |
Operating Temperature |
-55°C ~ 175°C (TJ) |
Rds On (Max) @ Id, Vgs |
5.8mOhm @ 100A, 10V |
Supplier Device Package |
ISOPLUS i4-PAC™ |
Gate Charge (Qg) (Max) @ Vgs |
178nC @ 10V |
Drain to Source Voltage (Vdss) |
75V |
Input Capacitance (Ciss) (Max) @ Vds |
10500pF @ 25V |
Current - Continuous Drain (Id) @ 25°C |
120A |