Category |
Transistors-Bipolar-Bjt-Single-Pre-Biased |
Manufacturer |
Renesas Electronics America Inc |
Series |
- |
Package |
Box |
RoHS |
RoHs |
Part Status |
Obsolete |
Power - Max |
200 mW |
Mounting Type |
- |
Package / Case |
- |
Transistor Type |
NPN - Pre-Biased |
Resistor - Base (R1) |
22 Ohms |
Frequency - Transition |
- |
Supplier Device Package |
- |
Resistor - Emitter Base (R2) |
22 Ohms |
Vce Saturation (Max) @ Ib, Ic |
200mV @ 250µ, 5mA |
Current - Collector (Ic) (Max) |
100 mA |
Current - Collector Cutoff (Max) |
100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce |
85 @ 5mA, 5V |
Voltage - Collector Emitter Breakdown (Max) |
50 V |