Category |
Transistors-Fets-Mosfets-Arrays |
Manufacturer |
Infineon Technologies |
Series |
CoolSiC™+ |
Package |
Tray |
RoHS |
RoHs |
FET Type |
6 N-Channel (3-Phase Bridge) |
FET Feature |
Silicon Carbide (SiC) |
Part Status |
Active |
Power - Max |
20mW (Tc) |
Mounting Type |
Chassis Mount |
Package / Case |
Module |
Vgs(th) (Max) @ Id |
5.55V @ 10mA |
Operating Temperature |
-40°C ~ 150°C (TJ) |
Rds On (Max) @ Id, Vgs |
45mOhm @ 25A, 15V (Typ) |
Supplier Device Package |
AG-EASY1BM-2 |
Gate Charge (Qg) (Max) @ Vgs |
62nC @ 15V |
Drain to Source Voltage (Vdss) |
1200V (1.2kV) |
Input Capacitance (Ciss) (Max) @ Vds |
1840pF @ 800V |
Current - Continuous Drain (Id) @ 25°C |
25A (Tj) |