Category |
Transistors-Fets-Mosfets-Arrays |
Manufacturer |
General Electric |
Series |
SiC Power |
Package |
Box |
RoHS |
RoHs |
FET Type |
2 N-Channel (Half Bridge) |
FET Feature |
Silicon Carbide (SiC) |
Part Status |
Active |
Power - Max |
1250W |
Mounting Type |
Chassis Mount |
Package / Case |
Module |
Vgs(th) (Max) @ Id |
4.5V @ 160mA |
Operating Temperature |
-55°C ~ 150°C (Tc) |
Rds On (Max) @ Id, Vgs |
4.4mOhm @ 475A, 20V |
Supplier Device Package |
- |
Gate Charge (Qg) (Max) @ Vgs |
1248nC @ 18V |
Drain to Source Voltage (Vdss) |
1200V (1.2kV) |
Input Capacitance (Ciss) (Max) @ Vds |
29.3nF @ 600V |
Current - Continuous Drain (Id) @ 25°C |
475A |