
Category |
Transistors-Bipolar-Bjt-Rf |
Manufacturer |
Renesas Electronics America Inc |
Series |
- |
Package |
Tube |
RoHS |
RoHs |
Gain |
- |
Part Status |
Obsolete |
Power - Max |
150mW |
Mounting Type |
Surface Mount |
Package / Case |
16-VFQFN Exposed Pad |
Transistor Type |
5 PNP |
Operating Temperature |
175°C (TJ) |
Frequency - Transition |
5.5GHz |
Supplier Device Package |
16-QFN (3x3) |
Noise Figure (dB Typ @ f) |
3.5dB @ 1GHz |
Current - Collector (Ic) (Max) |
65mA |
DC Current Gain (hFE) (Min) @ Ic, Vce |
20 @ 10mA, 2V |
Voltage - Collector Emitter Breakdown (Max) |
15V |