
Category |
Transistors-Bipolar-Bjt-Single |
Manufacturer |
onsemi |
Series |
- |
Package |
Tape & Box (TB) |
RoHS |
RoHs |
Part Status |
Obsolete |
Power - Max |
250 mW |
Mounting Type |
Through Hole |
Package / Case |
TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
Transistor Type |
NPN |
Operating Temperature |
150°C (TJ) |
Frequency - Transition |
300MHz |
Supplier Device Package |
TO-92-3 |
Vce Saturation (Max) @ Ib, Ic |
300mV @ 10mA, 100mA |
Current - Collector (Ic) (Max) |
150 mA |
Current - Collector Cutoff (Max) |
100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce |
350 @ 1mA, 6V |
Voltage - Collector Emitter Breakdown (Max) |
50 V |