Category |
Transistors-Bipolar-Bjt-Rf |
Manufacturer |
Central Semiconductor Corp |
Series |
- |
Package |
Box |
RoHS |
RoHs |
Gain |
- |
Part Status |
Obsolete |
Power - Max |
350mW |
Mounting Type |
Through Hole |
Package / Case |
- |
Transistor Type |
NPN |
Operating Temperature |
-65°C ~ 150°C (TJ) |
Frequency - Transition |
650MHz |
Supplier Device Package |
- |
Noise Figure (dB Typ @ f) |
- |
Current - Collector (Ic) (Max) |
- |
DC Current Gain (hFE) (Min) @ Ic, Vce |
60 @ 4mA, 10V |
Voltage - Collector Emitter Breakdown (Max) |
25V |