Category |
Transistors-Fets-Mosfets-Arrays |
Manufacturer |
Microchip Technology |
Series |
- |
Package |
Bulk |
RoHS |
RoHs |
FET Type |
4 N-Channel (Three Level Inverter) |
FET Feature |
Silicon Carbide (SiC) |
Part Status |
Active |
Power - Max |
319W (Tc) |
Mounting Type |
Chassis Mount |
Package / Case |
Module |
Vgs(th) (Max) @ Id |
3.2V @ 2.5mA |
Operating Temperature |
-40°C ~ 175°C (TJ) |
Rds On (Max) @ Id, Vgs |
45mOhm @ 30A, 20V |
Supplier Device Package |
SP3F |
Gate Charge (Qg) (Max) @ Vgs |
178nC @ 20V |
Drain to Source Voltage (Vdss) |
1700V (1.7kV) |
Input Capacitance (Ciss) (Max) @ Vds |
3300pF @ 1000V |
Current - Continuous Drain (Id) @ 25°C |
64A (Tc) |