Category |
Transistors-Fets-Mosfets-Arrays |
Manufacturer |
Microchip Technology |
Series |
- |
Package |
Bulk |
RoHS |
RoHs |
FET Type |
4 N-Channel (Three Level Inverter) |
FET Feature |
Silicon Carbide (SiC) |
Part Status |
Active |
Power - Max |
365W (Tc) |
Mounting Type |
Chassis Mount |
Package / Case |
Module |
Vgs(th) (Max) @ Id |
2.4V @ 4mA |
Operating Temperature |
-40°C ~ 175°C (TJ) |
Rds On (Max) @ Id, Vgs |
19mOhm @ 40A, 20V |
Supplier Device Package |
SP3F |
Gate Charge (Qg) (Max) @ Vgs |
215nC @ 20V |
Drain to Source Voltage (Vdss) |
700V |
Input Capacitance (Ciss) (Max) @ Vds |
4500pF @ 700V |
Current - Continuous Drain (Id) @ 25°C |
124A (Tc) |