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MT3S111TU,LF

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MT3S111TU,LF

  • Part No: MT3S111TU,LF
  • Manufacturer: Toshiba Semiconductor and Storage
  • In Stock: 27540
  • Description: RF SIGE NPN BIPOLAR TRANSISTOR N
  • Shipping Date: 2025/5/24
  • Datasheet: MT3S111TU,LF Datasheet
  • Category:Transistors-Bipolar-Bjt-Rf
  • Lead-Time:Contact Our sales representative Email:sales@keepboomingtech.com
Category
Transistors-Bipolar-Bjt-Rf
Manufacturer
Toshiba Semiconductor and Storage
Series
-
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
RoHS
RoHs
Gain
12.5dB
Part Status
Active
Power - Max
800mW
Mounting Type
Surface Mount
Package / Case
3-SMD, Flat Lead
Transistor Type
NPN
Operating Temperature
150°C (TJ)
Frequency - Transition
10GHz
Supplier Device Package
UFM
Noise Figure (dB Typ @ f)
0.6dB ~ 0.85dB @ 500MHz ~ 1GHz
Current - Collector (Ic) (Max)
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 30mA, 5V
Voltage - Collector Emitter Breakdown (Max)
6V