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MT3S113P(TE12L,F)

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MT3S113P(TE12L,F)

  • Part No: MT3S113P(TE12L,F)
  • Manufacturer: Toshiba Semiconductor and Storage
  • In Stock: 26758
  • Description: RF TRANS NPN 5.3V 7.7GHZ PW-MINI
  • Shipping Date: 2025/5/27
  • Datasheet: MT3S113P(TE12L,F) Datasheet
  • Category:Transistors-Bipolar-Bjt-Rf
  • Lead-Time:Contact Our sales representative Email:sales@keepboomingtech.com
Category
Transistors-Bipolar-Bjt-Rf
Manufacturer
Toshiba Semiconductor and Storage
Series
-
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
RoHS
RoHs
Gain
10.5dB
Part Status
Active
Power - Max
1.6W
Mounting Type
Surface Mount
Package / Case
TO-243AA
Transistor Type
NPN
Operating Temperature
150°C (TJ)
Frequency - Transition
7.7GHz
Supplier Device Package
PW-MINI
Noise Figure (dB Typ @ f)
1.45dB @ 1GHz
Current - Collector (Ic) (Max)
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 30mA, 5V
Voltage - Collector Emitter Breakdown (Max)
5.3V