
Category |
Transistors-Bipolar-Bjt-Rf |
Manufacturer |
NTE Electronics, Inc |
Series |
- |
Package |
Bag |
RoHS |
RoHs |
Gain |
16dB |
Part Status |
Active |
Power - Max |
225mW |
Mounting Type |
Through Hole |
Package / Case |
TO-206AF, TO-72-4 Metal Can |
Transistor Type |
PNP |
Operating Temperature |
200°C (TJ) |
Frequency - Transition |
2.3GHz |
Supplier Device Package |
TO-72 |
Noise Figure (dB Typ @ f) |
2.5dB ~ 4dB @ 200MHz ~ 800MHz |
Current - Collector (Ic) (Max) |
50mA |
DC Current Gain (hFE) (Min) @ Ic, Vce |
20 @ 10mA, 10V |
Voltage - Collector Emitter Breakdown (Max) |
25V |