
Category |
Transistors-Bipolar-Bjt-Rf |
Manufacturer |
NTE Electronics, Inc |
Series |
- |
Package |
Bag |
RoHS |
RoHs |
Gain |
18dB |
Part Status |
Active |
Power - Max |
180mW |
Mounting Type |
Surface Mount |
Package / Case |
3-SMD, Flat Lead |
Transistor Type |
NPN |
Operating Temperature |
- |
Frequency - Transition |
5GHz |
Supplier Device Package |
3-SMD |
Noise Figure (dB Typ @ f) |
2.4dB ~ 3dB @ 500MHz ~ 1GHz |
Current - Collector (Ic) (Max) |
30mA |
DC Current Gain (hFE) (Min) @ Ic, Vce |
25 @ 14mA, 10V |
Voltage - Collector Emitter Breakdown (Max) |
15V |