
Category |
Transistors-Bipolar-Bjt-Rf |
Manufacturer |
NTE Electronics, Inc |
Series |
- |
Package |
Bag |
RoHS |
RoHs |
Gain |
- |
Part Status |
Active |
Power - Max |
350mW |
Mounting Type |
Through Hole |
Package / Case |
TO-226-3, TO-92-3 (TO-226AA) |
Transistor Type |
NPN |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Frequency - Transition |
1.1GHz |
Supplier Device Package |
TO-92 |
Noise Figure (dB Typ @ f) |
- |
Current - Collector (Ic) (Max) |
50mA |
DC Current Gain (hFE) (Min) @ Ic, Vce |
25 @ 4mA, 4V |
Voltage - Collector Emitter Breakdown (Max) |
25V |