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Category |
Transistors-Bipolar-Bjt-Single-Pre-Biased |
Manufacturer |
NXP USA Inc. |
Series |
- |
Package |
Tape & Box (TB) |
RoHS |
RoHs |
Part Status |
Obsolete |
Power - Max |
700 mW |
Mounting Type |
Through Hole |
Package / Case |
TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
Transistor Type |
NPN - Pre-Biased |
Resistor - Base (R1) |
1 kOhms |
Frequency - Transition |
- |
Supplier Device Package |
TO-92-3 |
Resistor - Emitter Base (R2) |
10 kOhms |
Vce Saturation (Max) @ Ib, Ic |
1.15V @ 8mA, 800mA |
Current - Collector (Ic) (Max) |
800 mA |
Current - Collector Cutoff (Max) |
500nA |
DC Current Gain (hFE) (Min) @ Ic, Vce |
500 @ 300mA, 5V |
Voltage - Collector Emitter Breakdown (Max) |
40 V |