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RN1106MFV,L3XHF(CT

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RN1106MFV,L3XHF(CT

  • Part No: RN1106MFV,L3XHF(CT
  • Manufacturer: Toshiba Semiconductor and Storage
  • In Stock: 21302
  • Description: AUTO AEC-Q NPN Q1BSR=4.7K, Q1BER
  • Shipping Date: 2025/2/3
  • Datasheet: RN1106MFV,L3XHF(CT Datasheet
  • Category:Transistors-Bipolar-Bjt-Single-Pre-Biased
  • Lead-Time:Contact Our sales representative Email:sales@keepboomingtech.com
Category
Transistors-Bipolar-Bjt-Single-Pre-Biased
Manufacturer
Toshiba Semiconductor and Storage
Series
Automotive, AEC-Q101
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
RoHS
RoHs
Part Status
Active
Power - Max
150 mW
Mounting Type
Surface Mount
Package / Case
SOT-723
Transistor Type
NPN - Pre-Biased
Resistor - Base (R1)
4.7 kOhms
Frequency - Transition
-
Supplier Device Package
VESM
Resistor - Emitter Base (R2)
47 kOhms
Vce Saturation (Max) @ Ib, Ic
300mV @ 500µA, 5mA
Current - Collector (Ic) (Max)
100 mA
Current - Collector Cutoff (Max)
500nA
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 1mA, 5V
Voltage - Collector Emitter Breakdown (Max)
50 V