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SI5511DC-T1-E3

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SI5511DC-T1-E3

  • Part No: SI5511DC-T1-E3
  • Manufacturer: Vishay Siliconix
  • In Stock: 18384
  • Description: MOSFET N/P-CH 30V 4A 1206-8
  • Shipping Date: 2025/1/11
  • Datasheet: SI5511DC-T1-E3 Datasheet
  • Category:Transistors-Fets-Mosfets-Arrays
  • Lead-Time:Contact Our sales representative Email:sales@keepboomingtech.com
Category
Transistors-Fets-Mosfets-Arrays
Manufacturer
Vishay Siliconix
Series
TrenchFET®
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
RoHS
RoHs
FET Type
N and P-Channel
FET Feature
Logic Level Gate
Part Status
Obsolete
Power - Max
3.1W, 2.6W
Mounting Type
Surface Mount
Package / Case
8-SMD, Flat Lead
Vgs(th) (Max) @ Id
2V @ 250µA
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
55mOhm @ 4.8A, 4.5V
Supplier Device Package
1206-8 ChipFET™
Gate Charge (Qg) (Max) @ Vgs
7.1nC @ 5V
Drain to Source Voltage (Vdss)
30V
Input Capacitance (Ciss) (Max) @ Vds
435pF @ 15V
Current - Continuous Drain (Id) @ 25°C
4A, 3.6A