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SIZ998BDT-T1-GE3

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SIZ998BDT-T1-GE3

  • Part No: SIZ998BDT-T1-GE3
  • Manufacturer: Vishay Siliconix
  • In Stock: 9503
  • Description: DUAL N-CHANNEL 30-V (D-S) MOSFET
  • Shipping Date: 2024/12/24
  • Datasheet:
  • Category:Transistors-Fets-Mosfets-Arrays
  • Lead-Time:Contact Our sales representative Email:sales@keepboomingtech.com
Category
Transistors-Fets-Mosfets-Arrays
Manufacturer
Vishay Siliconix
Series
TrenchFET® Gen IV
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
RoHS
RoHs
FET Type
2 N-Channel (Dual), Schottky
FET Feature
Standard
Part Status
Active
Power - Max
3.8W (Ta), 20W (Tc), 4.8W (Ta), 32.9W (Tc)
Mounting Type
Surface Mount
Package / Case
8-PowerWDFN
Vgs(th) (Max) @ Id
2.2V @ 250µA
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
4.39mOhm @ 15A, 10V, 2.4mOhm @ 19A, 10V
Supplier Device Package
8-PowerPair® (6x5)
Gate Charge (Qg) (Max) @ Vgs
18nC @ 10V, 46.7nC @ 10V
Drain to Source Voltage (Vdss)
30V
Input Capacitance (Ciss) (Max) @ Vds
790pF @ 15V, 2130pF @ 15V
Current - Continuous Drain (Id) @ 25°C
23.7A (Ta), 54.8A (Tc), 36.2A (Ta), 94.6A (Tc)