Category |
Transistors-Bipolar-Bjt-Single |
Manufacturer |
Toshiba Semiconductor and Storage |
Series |
- |
Package |
Bulk |
RoHS |
RoHs |
Part Status |
Active |
Power - Max |
10 W |
Mounting Type |
Through Hole |
Package / Case |
TO-225AA, TO-126-3 |
Transistor Type |
PNP |
Operating Temperature |
150°C (TJ) |
Frequency - Transition |
100MHz |
Supplier Device Package |
TO-126N |
Vce Saturation (Max) @ Ib, Ic |
500mV @ 50mA, 500mA |
Current - Collector (Ic) (Max) |
1.5 A |
Current - Collector Cutoff (Max) |
100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce |
140 @ 100mA, 5V |
Voltage - Collector Emitter Breakdown (Max) |
160 V |