Category |
Transistors-Bipolar-Bjt-Arrays |
Manufacturer |
NTE Electronics, Inc |
Series |
- |
Package |
Bag |
RoHS |
RoHs |
Part Status |
Active |
Power - Max |
1W |
Mounting Type |
Through Hole |
Package / Case |
18-DIP (0.300", 7.62mm) |
Transistor Type |
8 NPN Darlington |
Operating Temperature |
-20°C ~ 85°C (TA) |
Frequency - Transition |
- |
Supplier Device Package |
18-PDIP |
Vce Saturation (Max) @ Ib, Ic |
1.6V @ 350mA, 500A |
Current - Collector (Ic) (Max) |
600mA |
Current - Collector Cutoff (Max) |
- |
DC Current Gain (hFE) (Min) @ Ic, Vce |
- |
Voltage - Collector Emitter Breakdown (Max) |
50V |