Category |
Transistors-Bipolar-Bjt-Arrays |
Manufacturer |
Rochester Electronics, LLC |
Series |
- |
Package |
Bulk |
RoHS |
RoHs |
Part Status |
Active |
Power - Max |
510mW |
Mounting Type |
Surface Mount |
Package / Case |
6-UFDFN Exposed Pad |
Transistor Type |
NPN, PNP |
Operating Temperature |
150°C (TJ) |
Frequency - Transition |
120MHz |
Supplier Device Package |
6-HUSON (2x2) |
Vce Saturation (Max) @ Ib, Ic |
290mV @ 200mA, 2A |
Current - Collector (Ic) (Max) |
2A |
Current - Collector Cutoff (Max) |
100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce |
200 @ 1A, 2V |
Voltage - Collector Emitter Breakdown (Max) |
30V |