Category |
Transistors-Bipolar-Bjt-Arrays |
Manufacturer |
NTE Electronics, Inc |
Series |
- |
Package |
Bag |
RoHS |
RoHs |
Part Status |
Active |
Power - Max |
750mW |
Mounting Type |
Through Hole |
Package / Case |
14-DIP (0.300", 7.62mm) |
Transistor Type |
5 NPN |
Operating Temperature |
-55°C ~ 125°C (TA) |
Frequency - Transition |
550MHz |
Supplier Device Package |
14-PDIP |
Vce Saturation (Max) @ Ib, Ic |
230mV @ 1mA, 10mA |
Current - Collector (Ic) (Max) |
50mA |
Current - Collector Cutoff (Max) |
500nA |
DC Current Gain (hFE) (Min) @ Ic, Vce |
40 @ 1mA, 3V |
Voltage - Collector Emitter Breakdown (Max) |
24V |