Category |
Transistors-Bipolar-Bjt-Arrays |
Manufacturer |
Toshiba Semiconductor and Storage |
Series |
- |
Package |
Tape & Reel (TR) |
RoHS |
RoHs |
Part Status |
Obsolete |
Power - Max |
400mW |
Mounting Type |
Surface Mount |
Package / Case |
SOT-23-6 Thin, TSOT-23-6 |
Transistor Type |
NPN, PNP |
Operating Temperature |
150°C (TJ) |
Frequency - Transition |
- |
Supplier Device Package |
VS-6 (2.9x2.8) |
Vce Saturation (Max) @ Ib, Ic |
170mV @ 6mA, 300mA, 230mV @ 10mA, 300mA |
Current - Collector (Ic) (Max) |
1A, 700mA |
Current - Collector Cutoff (Max) |
100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce |
400 @ 100mA, 2V / 200 @ 100mA, 2V |
Voltage - Collector Emitter Breakdown (Max) |
50V |